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| @vic AV9012 TO-92 Plastic-Encapsulate Transistors AV9012 TRANSISTOR PNP FEATURES Power dissipation PCM : 0.625 WTamb=25 Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJTstg: -55 to +150 TO--92 1. EMITTER 2. BASE 3.COLLECTOR 1 23 ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE1 DC current gain HFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(sat) VEB VCE= -1V, IC =-500 mA IC=-500 mA, IB=-50 mA IC=-500mA,IB=-50 mA IE=-100mA VCE=- 6 V, IC= -20 mA 40 -0.6 -1.2 -1.4 V V V Test conditions Ic= -100A IE=0 Ic= -0. 1 mA IB=0 IE= -100A IC=0 VCB=-40 V IE=0 VCE=- 20 V IB=0 VEB= - 5 V IC=0 VCE= -1 V, IC= -50 mA 64 MIN -40 -25 -5 -0.1 -0.2 -0.1 300 MAX UNIT V V V A A A Transition frequency fT f =30MHz 150 MHz CLASSIFICATION OF HFE(1) Rank Range D 64-91 E 78-112 F 96-135 G 112-166 H 144-202 I 190-300 Copyright (c) Avic Electronics Corp. 1 Website: http://www.avictek.com @vic Typical Characteristics -50 IB=-300A IB=-250A IB=-200A -30 -20 -10 0 0 -10 -20 -30 -40 -50 IB=-150A IB=-100A IB=-50A 1000 AV9012 VCE = -1V IC[mA], Collector Current -40 hFE, DC Current Gain 100 10 -10 -100 -1000 VCE[V], Collector-Emitter Voltage Figure 1. Static Characteristic IC[mA], Collector Current Figure 2. DC current Gain fT[MHz], Current Gain-Bandwidth Product 1000 VBE(sat) 1000 VCE = -6V VBE(sat), VCE(sat)[V], Saturation Voltage 100 100 VCE(sat) 10 10 -10 -100 IC=10IB -1000 1 -1 -10 -100 -1000 -10000 IC[mA], Collector Current Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC[mA], Collector Current Figure 4. Current Gain Bandwidth Product Copyright (c) Avic Electronics Corp. 2 Website: http://www.avictek.com |
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